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| MJD122 (NPN) MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features * Lead Formed for Surface Mount Applications in Plastic Sleeves * Surface Mount Replacements for 2N6040-2N6045 Series, * * * * * TIP120-TIP122 Series, and TIP125-TIP127 Series Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS 4 12 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range - Continuous - Peak Symbol VCEO VCB VEB IC IB PD PD 1.75 0.014 TJ, Tstg -65 to +150 W W/C C Value 100 100 5 8 16 120 20 0.16 Unit Vdc Vdc Vdc Adc mAdc W W/C Y WW x G YWW J12xG = Year = Work Week = 2 or 7 = Pb-Free Package ORDERING INFORMATION Device MJD122 MJD122G MJD122T4 MJD122T4G Package DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) Shipping 75 Units/Rail 75 Units/Rail 2500/Tape & Reel 2500/Tape & Reel 75 Units/Rail 75 Units/Rail 2500/Tape & Reel 2500/Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient (Note1) Symbol RqJC RqJA Max 6.25 71.4 Unit C/W C/W MJD127 MJD127G MJD127T4 MJD127T4G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 1 December, 2005 - Rev. 7 Publication Order Number: MJD122/D MJD122 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) Base-Emitter Saturation Voltage (Note 2) (IC = 8 Adc, IB = 80 mAdc) Base-Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Small-Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. MJD127 MJD122 hfe |hfe| Cob - - 300 300 200 - - 4 - MHz pF hFE 1000 100 VCE(sat) - - VBE(sat) VBE(on) - - 2 4 4.5 2.8 Vdc Vdc 12,000 - Vdc - VCEO(sus) ICEO ICBO IEBO 100 - - - - 10 10 2 Vdc mAdc mAdc mAdc Symbol Min Max Unit TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 2 20 TC TA SURFACE MOUNT 1.5 15 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) 125 150 Figure 1. Power Derating http://onsemi.com 2 MJD122 (NPN) TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 20,000 VCE = 4 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 3000 2000 25C 1000 700 500 300 200 0.1 -55 C 10,000 5000 3000 2000 25C 1000 500 300 200 0.1 -55 C TJ = 150C 20,000 VCE = 4 V NPN MJD122 TJ = 150C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 TJ = 25C 2.6 IC = 2 A 4A 6A 3 TJ = 25C 2.6 IC = 2 A 4A 6A 2.2 2.2 1.8 1.8 1.4 1 0.3 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.5 0.7 1 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 3 TJ = 25C 2.5 2 2 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 0.5 0.1 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1.5 1 0.5 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages http://onsemi.com 3 MJD122 (NPN) TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 0.2 0.3 0.5 1 23 IC, COLLECTOR CURRENT (AMP) 5 7 10 qVB for VBE qVC for VCE(sat) -55 C to 25C 25C to 150C 25C to 150C *IC/IB hFE/3 +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 qVB for VBE 25C to 150C -55 C to 25C 5 7 10 *qVC for VCE(sat) -55 C to 25C *IC/IB hFE/3 25C to 150C NPN MJD122 -55 C to 25C 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) Figure 5. Temperature Coefficients 105 REVERSE IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 10-1 +0.6 +0.4 TJ = 150C 100C 25C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 VCE = 30 V IC, COLLECTOR CURRENT ( A) FORWARD 105 REVERSE 104 103 102 TJ = 150C 101 100 100C VCE = 30 V FORWARD 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) +1.2 +1.4 Figure 6. Collector Cut-Off Region 10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 PNP NPN TC = 25C VCE = 4 Vdc IC = 3 Adc C, CAPACITANCE (pF) 300 TJ = 25C 200 Cob 100 70 Cib 50 PNP NPN 0.2 0.5 1 2 5 10 20 50 100 30 0.1 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Small-Signal Current Gain http://onsemi.com 4 Figure 8. Capacitance MJD122 (NPN) 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT V2 APPROX +8 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1% RB 51 D1 +4V 8 k 120 VCC -30 V RC SCOPE t, TIME ( s) 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 ts PNP NPN tf 25 ms FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 V 5 7 10 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) Figure 9. Switching Times Test Circuit Figure 10. Switching Times r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) 0.1 0.07 0.05 0.03 0.02 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 Figure 11. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 15 10 5 3 2 1 TJ = 150C 1 ms 500 m 100 m 5 ms 0.5 0.3 0.2 0.1 0.05 0.03 0.02 BONDING WIRE LIMIT THERMAL LIMIT TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 30 dc 50 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea http://onsemi.com 5 MJD122 (NPN) PNP COLLECTOR NPN COLLECTOR BASE BASE 8k 120 8k 120 EMITTER EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 MJD122 (NPN) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D 2 PL G 0.13 (0.005) M J H T DIM A B C D E F G H J K L R S U V Z STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 MJD122/D |
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